is now a part of the EMD Electronics business of Merck KGaA, Darmstadt, Germany
  • Home
  • Services
    • SCAN
    • SEARCH
    • STUDY
    • SOLVE
  • Capabilities
    • Deposition
    • Characterization
    • Materials & Device Simulation
    • Fab & Facility
  • Markets
    • Semiconductor
    • Displays and Sensors
    • Startups
  • Materials
    • Metal Oxides
    • Metal Nitrides
    • Ferroelectrics
    • Chalcogenides
    • Alloys
    • Discoveries
  • Company
    • Overview
    • Management
    • News
    • Careers
    • Contact Us
SEMICONDUCTOR SOLUTIONS COVID-19 INFORMATION CENTER

Inherently Ferroelectric Films by ALD Using ZrD-04 and HfD-04

Posted on August 28, 2020 by Nicole Conley
This entry was posted in Uncategorized. Bookmark the permalink.

Post navigation

  • ← Industry’s First 4-Element ALD Chalcogenide-based OTS for 3D Memory Arrays
  • Leakage variation with Aspect Ratio in ALD High-k ZrO2 Dielectrics →

Archives

  • May 2021
  • March 2021
  • January 2021
  • December 2020
  • August 2020
  • July 2020
  • June 2020
  • January 2020
  • May 2019
  • May 2016

Meta

  • Log in
  • Contact Us
  • Privacy Policy
  • Terms of Use
  • Site Map
  • Customer Login