News and Resources
Presentations:
ALE 2021 Oxidation Influences Etch Quality in the Low-T Thermal ALE of Cu
Materials Matter Blog:
Shedding new light onto the structure of ferroelectric hafnium oxide films
Materials Matter – A Blog from Intermolecular
Leakage Variation with Aspect Ratio in ALD High-k ZrO2 Dielectrics
Materials Matter – A Blog from Intermolecular
Accelerating Analog AI R&D for Neuromorphic Computing Takes Intelligence
Materials Matter – A Blog from Intermolecular
Industry’s First 4-Element ALD Chalcogenide-based OTS for 3D Memory Arrays
Materials Matter – A Blog from Intermolecular
ALD in Confined Spaces
Materials Matter – A Blog from Intermolecular
Why Does Nano-Stacking Make Ferroelectric Materials Better?
Materials Matter – A Blog from Intermolecular
NVM Memories: A Look at the Advantages of ALD Chalcogenides
Materials Matter – A Blog from Intermolecular
The Advantages of Phase Change Memory
Materials Matter – A Blog from Intermolecular
Using High-throughput Experimentation (HTE) for Chalcogenide Selectors
Materials Matter – A Blog from Intermolecular
What is a Ferroelectric Material and How is it Used?
Materials Matter – A Blog from Intermolecular
Intermolecular in the News:
Outlook for 2021: Executive ViewPoints: Casper van Oosten
Semiconductor Digest– December Issue 2020
2020: A Turning Point In The Chip Industry
Semiconductor Engineering – December 28, 2020
New NVM Architecture Could Open Up Xpoint Market
EE Times – August 11, 2020
Atomic layer deposition of germanium-selenium-tellurium compounds for low-leakage, tunable ovonic threshold switches
Journal of Vacuum Science and Technology – July 31, 2020
Intermolecular Develops Four-Element ALD Chalcogenide-based OTS for 3D Memory Arrays
Embedded Computing Design – June 19, 2020
Week In Review: Manufacturing, Test
Semiconductor Engineering – June 19, 2020
Interconnect Challenges Grow, Tools Lag
Semiconductor Engineering – June 15, 2020
Aging Problems At 5nm And Below
Semiconductor Engineering – June 11, 2020
Crystal Phase Distribution and Ferroelectricity in Ultrathin HfO2–ZrO2 Bilayers
Journal of Vacuum Science and Technology
What Worked, What Didn’t in 2019
Semiconductor Engineering
Does PCRAM Have Potential Beyond Optane?
EE Times
Combinatorial Screening of Thermoelectric Materials
Advanced Materials and Processes
Conformal deposition of GeTe films with tunable Te composition by atomic layer deposition
Journal of Vacuum Science and Technology
Fast Screening for Next-Gen Memory Chips: A Look at Intermolecular, a Silicon Valley Fab Company
All About Circuits
Accelerating New Memory Materials Research
The Memory Guy
Fabs, In Silicon Valley?
FORBES
A Fab for All Reasons
EE Journal
May 4, 2021
March 4, 2021
Intermolecular Announces Breakthrough Four-Element ALD Chalcogenide-based OTS for 3D Memory Arrays
June 16, 2020
Intermolecular to Lead Session on 3D XPoint: Current Implementations and Future Trends at Flash Memory Summit 2019
August 1, 2019
Intermolecular Stockholders Approve Merck KGaA Darmstadt Germany’s Proposed Acquisition of Intermolecular
July 17, 2019
OnDemand Webinars
Inherently Ferroelectric Films by ALD Using ZrD-04 and HfD-04
Leakage Variation with Aspect Ratio in ALD High-k ZrO2 Dielectrics
ALD GeAsSeTe Ovonic Threshold Switch for 3D stackable crosspoint memory.
Watch the 15-minute webinar on innovating with ALD chalcogenide materials.
