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Materials Matter Blog

Presentations:

ALD 2020 Presentation by Dr. Martin McBriarty, Intermolecular Inc., Leakage variation with Aspect Ratio in ALD High-k ZrO2 Dielectrics

ALD 2020 Presentation by Dr. Vijay Narasimhan, Intermolecular Inc., Inherently Ferroelectric Films by ALD Using ZrD-04 and HfD-04

IMW 2020 Presentation by Mario Laudato, Intermolecular Inc., ALD GeAsSeTe Ovonic Threshold Switch for 3D stackable crosspoint memory

Materials Matter Blog:

Industry’s First 4-Element ALD Chalcogenide-based OTS for 3D Memory Arrays
Materials Matter – A Blog from Intermolecular

ALD in Confined Spaces
Materials Matter – A Blog from Intermolecular

Why Does Nano-Stacking Make Ferroelectric Materials Better?
Materials Matter – A Blog from Intermolecular

NVM Memories: A Look at the Advantages of ALD Chalcogenides
Materials Matter – A Blog from Intermolecular

The Advantages of Phase Change Memory
Materials Matter – A Blog from Intermolecular

Using High-throughput Experimentation (HTE) for Chalcogenide Selectors
Materials Matter – A Blog from Intermolecular

What is a Ferroelectric Material and How is it Used?
Materials Matter – A Blog from Intermolecular

 

Intermolecular in the News:

New NVM Architecture Could Open Up Xpoint Market
EE Times – August 11, 2020

Atomic layer deposition of germanium-selenium-tellurium compounds for low-leakage, tunable ovonic threshold switches
Journal of Vacuum Science and Technology – July 31, 2020

Intermolecular Develops Four-Element ALD Chalcogenide-based OTS for 3D Memory Arrays
Embedded Computing Design – June 19, 2020

Week In Review: Manufacturing, Test
Semiconductor Engineering – June 19, 2020

Interconnect Challenges Grow, Tools Lag
Semiconductor Engineering – June 15, 2020

Aging Problems At 5nm And Below
Semiconductor Engineering – June 11, 2020

Intermolecular Develops Four-Element ALD Chalcogenide-based OTS for 3D Memory Arrays
Embedded Computing Design

Week In Review: Manufacturing, Test
Semiconductor Engineering

Interconnect Challenges Grow, Tools Lag
Semiconductor Engineering

Aging Problems at 5nm And Below
Semiconductor Engineering

Crystal Phase Distribution and Ferroelectricity in Ultrathin HfO2–ZrO2 Bilayers
Journal of Vacuum Science and Technology

What Worked, What Didn’t in 2019
Semiconductor Engineering

Does PCRAM Have Potential Beyond Optane?
EE Times

Combinatorial Screening of Thermoelectric Materials
Advanced Materials and Processes

Conformal deposition of GeTe films with tunable Te composition by atomic layer deposition
Journal of Vacuum Science and Technology

Fast Screening for Next-Gen Memory Chips: A Look at Intermolecular, a Silicon Valley Fab Company
All About Circuits

Accelerating New Memory Materials Research
The Memory Guy

Fabs, In Silicon Valley?
FORBES

A Fab for All Reasons
EE Journal

Press Releases

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OnDemand Webinar



ALD GeAsSeTe Ovonic Threshold Switch for 3D stackable crosspoint memory.

Watch the 15-minute webinar on innovating with ALD chalcogenide materials.


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