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Shedding new light onto the structure of ferroelectric hafnium oxide films

By Vijay Narasimhan, manager, Early Stage R&D at EMD Electronics Recently we published a study with our partners at the Stanford Synchrotron Radiation Lightsource, part of SLAC National Accelerator Laboratory. In this work, we discovered the presence of a transient crystal structure in hafnium oxide that forms just as it is heated above its crystallization temperature. […]

Merck KGaA, Darmstadt, Germany moves the Silicon Valley Innovation Hub to San Jose’s Intermolecular site

  News Release   Merck KGaA, Darmstadt, Germany, a leading science and technology company, has moved its Silicon Valley Innovation Hub team to San Jose’s Intermolecular‘s 150,000 sqft facility, creating a unique space for innovation and collaboration at the intersection of life science, healthcare and electronic materials. The fully equipped cleanrooms, labs and services of […]

Leakage variation with Aspect Ratio in ALD High-k ZrO2 Dielectrics

Inherently Ferroelectric Films by ALD Using ZrD-04 and HfD-04

ALD GeAsSeTe Ovonic Threshold Switch for 3D Stackable Crosspoint memory

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Intermolecular Announces Breakthrough Four-Element ALD Chalcogenide-based OTS for 3D Memory Arrays

Atomic layer deposition (ALD) GeAsSeTe Ovonic Threshold Switch (OTS) device advances applications of 3D Non-volatile memory (NVM) Enables new innovations in Neuromorphic Computing, AI, Gaming and Data Centers  San Jose, Calif., June 16, 2020 – Intermolecular, Inc. (“Intermolecular”), the trusted partner for materials innovation and a wholly-owned subsidiary of Merck KGaA, Darmstadt, Germany, today announced […]