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ALD in Confined Spaces

In 3D vertical memory, active and electrode materials are layered inside deep vias with aspect ratios greater than 40:1. In previous posts, we’ve talked about how atomic layer deposition (ALD), a layer-by-layer, self-saturating chemical deposition process, can fill these types of structures. In the example below, ALD deposited memory elements and selective elements run down […]

Intermolecular releases a new blog on materials innovation.

Using high-throughput experimentation (HTE) for chalcogenide selectors

What is a ferroelectric material and how is it used?