Leakage Variation with Aspect Ratio in ALD High-k ZrO2 Dielectrics

by Martin McBriarty, Intermolecular Inc., a business of Merck KGaA Darmstadt, Germany During last year’s virtual International Conference on Atomic Layer Deposition (ALD), Dr. Martin McBriarty delivered a presentation on ALD in high-aspect-ratio spaces (HAR). This blog summarizes the presentation, exploring how a material’s properties may change as the material goes into deep features like […]

Accelerating Analog AI R&D for Neuromorphic Computing Takes Intelligence

by Ganesh Panaman, Intermolecular Inc., a business of Merck KGaA Darmstadt, Germany   While artificial intelligence (AI) algorithms can be embedded in digital vonNeumann ICs, excessive size and energy consumption represents a significant barrier to the widespread adoption of such neuromorphic AI chips both at the “edge” and in the “cloud”. The U.S. Semiconductor Research […]

Industry’s First 4-Element ALD Chalcogenide-based OTS for 3D Memory Arrays

The semiconductor industry has been exploring the use of 3D crosspoint memory for years. I recently gave a talk at IEEE International Memory Workshop on 3D crosspoint memory arrays and Intermolecular also announced an industry-first related to this topic: the first 4-element Chalcogenide-based OTS for 3D memory arrays. The results of the work we did […]

ALD in Confined Spaces

In 3D vertical memory, active and electrode materials are layered inside deep vias with aspect ratios greater than 40:1. In previous posts, we’ve talked about how atomic layer deposition (ALD), a layer-by-layer, self-saturating chemical deposition process, can fill these types of structures. In the example below, ALD deposited memory elements and selective elements run down […]

Intermolecular releases a new blog on materials innovation.

Using high-throughput experimentation (HTE) for chalcogenide selectors

What is a ferroelectric material and how is it used?