Author: Nicole Conley

Leakage variation with Aspect Ratio in ALD High-k ZrO2 Dielectrics

Inherently Ferroelectric Films by ALD Using ZrD-04 and HfD-04

Industry’s First 4-Element ALD Chalcogenide-based OTS for 3D Memory Arrays

The semiconductor industry has been exploring the use of 3D crosspoint memory for years. I recently gave a talk at IEEE International Memory Workshop on 3D crosspoint memory arrays and Intermolecular also announced an industry-first related to this topic: the first 4-element Chalcogenide-based OTS for 3D memory arrays. The results of the work we did […]

ALD GeAsSeTe Ovonic Threshold Switch for 3D Stackable Crosspoint memory

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Intermolecular Announces Breakthrough Four-Element ALD Chalcogenide-based OTS for 3D Memory Arrays

Atomic layer deposition (ALD) GeAsSeTe Ovonic Threshold Switch (OTS) device advances applications of 3D Non-volatile memory (NVM) Enables new innovations in Neuromorphic Computing, AI, Gaming and Data Centers  San Jose, Calif., June 16, 2020 – Intermolecular, Inc. (“Intermolecular”), the trusted partner for materials innovation and a wholly-owned subsidiary of Merck KGaA, Darmstadt, Germany, today announced […]

ALD in Confined Spaces

In 3D vertical memory, active and electrode materials are layered inside deep vias with aspect ratios greater than 40:1. In previous posts, we’ve talked about how atomic layer deposition (ALD), a layer-by-layer, self-saturating chemical deposition process, can fill these types of structures. In the example below, ALD deposited memory elements and selective elements run down […]