Month: August 2020

Leakage variation with Aspect Ratio in ALD High-k ZrO2 Dielectrics

Inherently Ferroelectric Films by ALD Using ZrD-04 and HfD-04

Industry’s First 4-Element ALD Chalcogenide-based OTS for 3D Memory Arrays

The semiconductor industry has been exploring the use of 3D crosspoint memory for years. I recently gave a talk at IEEE International Memory Workshop on 3D crosspoint memory arrays and Intermolecular also announced an industry-first related to this topic: the first 4-element Chalcogenide-based OTS for 3D memory arrays. The results of the work we did […]